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| DATA SHEET 3EZ11~3EZ39 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES 3.0 Watts VOLTAGE POWER 11 to 39 Volts FEATURES * Low profile package 1.0(25.4)MIN. DO-15 Unit: inch(mm) * Built-in strain relief * Glass passivated iunction * Low inductance * Typical ID less than 1.0A above 11V * Plastic package has Underwriters Laboratory Flammability Classification 94V-O .034(.86) .028(.71) .300(7.6) * Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .230(5.8) * High temperature soldering : 260C /10 seconds at terminals .140(3.6) MECHANICALDATA Case: JEDEC DO-15, Molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes positive end (cathode) Standard packing: 52mm tape Weight: 0.015 ounce, 0.04 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified. Parameter Pwak Pulse Power Dissipation on TA=50O C (Notes A) Derate above 70OC Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction and Storage Temperature Range Symbol Value 3.0 24.0 15 -55 to + 150 Units W atts mW/ O C Amps O PD IFSM TJ,TSTG 1.0(25.4)MIN. .104(2.6) C NOTES: A.Mounted on 5.0mm2 (.013mm thick) land areas. B.Measured on8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum STAD-JUL.01.2004 PAGE . 1 N o m i na l Ze ne r V o l t a g e Part Number No m. V 3.0 Watt ZENER 3EZ11 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ17 3EZ18 3EZ19 3EZ20 3EZ22 3EZ24 3EZ27 3EZ28 3EZ30 3EZ33 3EZ36 3EZ39 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 27.0 28.0 30.0 33.0 36.0 39.0 10.05 11.4 12.4 13.3 14.3 15.2 16.2 17.1 18.1 19.0 20.9 22.8 25.7 26.6 28.5 31.4 34.2 37.1 11.6 12.6 13.7 14.7 15.8 16.8 17.9 18.9 20.0 21.0 23.1 25.2 28.4 29.4 31.5 34.7 37.8 41.0 4.0 4.5 4.5 5.0 5.5 5.5 6.0 6.0 7.0 7.0 8.0 9.0 10.0 12.0 16.0 20.0 22.0 28.0 V Z @ IZT M i n. V M a x. V ZZT @ IZT O hm s M a x i m u m Z e n e r Im p e d a n c e IZT mA ZZK @ IZK O hm s IZK mA Leakage Current IR @VR uA V 68.0 63.0 58.0 53.0 50.0 47.0 44.0 42.0 40.0 37.0 34.0 31.0 28.0 27.0 25.0 23.0 21.0 19.0 700 700 700 700 700 700 750 750 750 750 750 750 750 750 1000 1000 1000 1000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 8.4 9.1 9.9 10.6 11.4 12.2 13.0 13.7 14.4 15.2 16.7 18.2 20.6 21.0 22.5 25.1 27.4 29.7 STAD-JUL.01.2004 PAGE . 2 1000 500 300 200 100 50 30 20 10 APPLICATION NOTE: Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, T L , should be determined from: T L = q LA P D + T A O q L A is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for q L A will vary and depends on the device mounting method. q L A is generally 30-40 OC/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie poin The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: T J = T L + D T JL D T JL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power puls or from Figure 10 for dc power. D T JL = q J L P D For worst-case design, using expected limits of I Z , limits of P D and the extremes of T J ( D T J ) may be estimated. Changes in volta V Z , can then be found from: DV = qV Z DT J q V Z , the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resis For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than w be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in s spots resulting in device degradation should the limits of Figure 3 be exceeded. STAD-JUL.01.2004 PAGE . 3 STAD-JUL.01.2004 PAGE . 4 |
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